Geförderte OA-Publikationen

Range-resolved interferometry (RRI) allows the simultaneous demodulation of multiple interferometric signal sources and provides a tomographic view of all constituent interferometers that may be present in a setup. Through comparison with a reference distance of known length, absolute distance measurements can be performed. RRI is tailored to the use of laser frequency modulation through injection-current modulation of regular, monolithic laser diodes that are both cost-effective and highly coherent and therefore this approach promises broad applicability. In this paper, two methods for absolute distance measurement, one based on the direct evaluation of the signal peak positions and one based on the phase demodulation of an additional lock-in modulation signal, are experimentally demonstrated. Using an external verification displacement interferometer, both techniques are shown to achieve in-situ absolute distance measurements with systematic errors below over a 50 mm travel range. The aim of this paper is to establish the general suitability of RRI for absolute distance measurements and in-situ tomographic interferometer characterisation for precision engineering. In future, this approach could be used to diagnose interferometric setups for parasitic signal contributions, multiple reflections or to determine the dead path length for accurate environmental compensation, either for use during initial setup of, or for continuous operation alongside, a regular displacement measuring interferometer.

The ASi-Sii defect model as one possible explanation for light-induced degradation (LID) in typically boron-doped silicon solar cells, detectors, and related systems is discussed and reviewed. Starting from the basic experiments which led to the ASi-Sii defect model, the ASi-Sii defect model (A: boron, or indium) is explained and contrasted to the assumption of a fast-diffusing so-called “boron interstitial.” An LID cycle of illumination and annealing is discussed within the conceptual frame of the ASi-Sii defect model. The dependence of the LID defect density on the interstitial oxygen concentration is explained within the ASi-Sii defect picture. By comparison of electron paramagnetic resonance data and minority carrier lifetime data related to the assumed fast diffusion of the “boron interstitial” and the annihilation of the fast LID component, respectively, the characteristic EPR signal Si-G28 in boron-doped silicon is related to a specific ASi-Sii defect state. Several other LID-related experiments are found to be consistent with an interpretation by an ASi-Sii defect.

Solar energy is a green, sustainable, and de facto inexhaustible energy source for mankind. The conversion of solar energy into other forms of energy has attracted extensive research interest due to climate change and the energy crisis. Among all the solar energy conversion technologies, photothermal conversion of solar energy exhibits unique advantages when applied for water purification, desalination, high-temperature heterogeneous catalysis, anti-bacterial treatments, and deicing. In this review, the various photothermal conversion mechanisms based on different forms of heat release are summarized and some of the latest examples are presented. In addition, the necessary prerequisites for solar-driven photothermal materials toward their practical applications are also discussed. Further, the latest advances in photothermal conversion of solar energy are discussed, focusing on different types of photothermal applications. Finally, a summary is given and the challenges and opportunities in the photothermal conversion of solar energy are presented. This review aims to give a comprehensive understanding of emerging solar energy conversion technologies based on the photothermal effect, especially by using nanomaterials and nanostructures.

Processing continuous data streams is one of the hot topics of our time. A major challenge is the formulation of a suitable and efficient stream processing pipeline. This process is complicated by long restart times after pipeline modifications and tight dependencies on the actual data to process. To approach these issues, we have developed StreamVizzard - an interactive and explorative stream processing editor to simplify the pipeline engineering process. Our system allows to visually configure, execute, and completely modify a pipeline during runtime without any delay. Furthermore, an adaptive visualizer automatically displays the operator's processed data and statistics in a comprehensible way and allows the user to explore the data and support his design decisions. After the pipeline has been finalized our system automatically optimizes the pipeline based on collected statistics and generates standalone runtime code for productive use at a targeted stream processing engine.

A multistage optimization method is developed yielding Tesla valves that are efficient even at low flow rates, characteristic, e.g., for almost all microfluidic systems, where passive valves have intrinsic advantages over active ones. We report on optimized structures that show a diodicity of up to 1.8 already at flow rates of 20 μl s^-1 corresponding to a Reynolds number of 36. Centerpiece of the design is a topological optimization based on the finite element method. It is set-up to yield easy-to-fabricate valve structures with a small footprint that can be directly used in microfluidic systems. Our numerical two-dimensional optimization takes into account the finite height of the channel approximately by means of a so-called shallow-channel approximation. Based on the three-dimensionally extruded optimized designs, various test structures were fabricated using standard, widely available microsystem manufacturing techniques. The manufacturing process is described in detail since it can be used for the production of similar cost-effective microfluidic systems. For the experimentally fabricated chips, the efficiency of the different valve designs, i.e., the diodicity defined as the ratio of the measured pressure drops in backward and forward flow directions, respectively, is measured and compared to theoretical predictions obtained from full 3D calculations of the Tesla valves. Good agreement is found. In addition to the direct measurement of the diodicities, the flow profiles in the fabricated test structures are determined using a two-dimensional microscopic particle image velocimetry (μPIV) method. Again, a reasonable good agreement of the measured flow profiles with simulated predictions is observed.